• Vishay - SI7615ADN-T1-GE3
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Vishay MOSFETs SI7615ADN-T1-GE3

Vishay MOSFETs SI7615ADN-T1-GE3

SKUSI7615ADN-T1-GE3BrandVishay
AED 1.07
AED 1.07
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Vishay, SI7615ADN-T1-GE3, Vishay Siliconix

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  • Brand: Vishay
  • Channel Type: P
  • Maximum Continuous Drain Current: 35 A
  • Maximum Drain Source Voltage: 20 V
  • Package Type: PowerPAK 1212-8
  • Mounting Type: Surface Mount
  • Pin Count: 8
  • Maximum Drain Source Resistance: 9.8 m?
  • Channel Mode: Enhancement
  • Minimum Gate Threshold Voltage: 0.4V
  • Maximum Power Dissipation: 52 W
  • Transistor Configuration: Single
  • Maximum Gate Source Voltage: -12 V, +12 V
  • Number of Elements per Chip: 1
  • Length: 3.4mm
  • Typical Gate Charge @ Vgs: 122 nC @ 10 V
  • Maximum Operating Temperature: +150 °C
  • Width: 3.4mm
  • Transistor Material: Si
  • Height: 1.12mm
  • Minimum Operating Temperature: -55 °C

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