• Infineon - IPD80R3K3P7ATMA1
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Infineon MOSFETs IPD80R3K3P7ATMA1

Infineon MOSFETs IPD80R3K3P7ATMA1

SKUIPD80R3K3P7ATMA1BrandInfineon
AED 33.17
AED 33.17
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Infineon, N-Channel MOSFET, 19 A, 800 V, 3-Pin DPAK Infineon IPD80R3K3P7ATMA1

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  • Brand: Infineon
  • Channel Type: N
  • Maximum Continuous Drain Current: 1.9 A
  • Maximum Drain Source Voltage: 800 V
  • Series: CoolMOS™ P7
  • Package Type: TO-252
  • Mounting Type: Surface Mount
  • Pin Count: 3
  • Maximum Drain Source Resistance: 3.3 O
  • Channel Mode: Enhancement
  • Maximum Gate Threshold Voltage: 3.5V
  • Number of Elements per Chip: 1
  • Transistor Material: Si

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