Vishay MOSFETs SQUN702E-T1_GE3

SKUSQUN702E-T1_GE3BrandVishay

AED 13.27

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Vishay, MOSFET, NPN Channel, 0.0135 (Channel 2), 0.048 (Channel 1), 0.06 (Channel 3), 30A, 30A, 20A, Triple Nut,

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Brand: Vishay
Channel Type: N, P
Maximum Continuous Drain Current: 30 A, 30 A, 20 A
Maximum Drain Source Voltage: 200 (Channel 3) V, 40 (Channel 1) V, 40 (Channel 2) V
Package Type: Triple Die
Mounting Type: Surface Mount
Pin Count: 10
Maximum Drain Source Resistance: 0.0135 (Channel 2) ?, 0.048 (Channel 1) ?, 0.06 (Channel 3) ?
Channel Mode: Enhancement
Maximum Gate Threshold Voltage: 2.5 (Channel 1) V, 2.5 (Channel 2) V, 3.5 (Channel 3) V

Minimum Gate Threshold Voltage: 1.5 (Channel 1) V, 1.5 (Channel 2) V, 2.5 (Channel 3) V
Maximum Power Dissipation: 48 W, 48 W, 60 W
Transistor Configuration: Common Drain
Maximum Gate Source Voltage: 20 V
Number of Elements per Chip: 3
Typical Gate Charge @ Vgs: 14 nC @ 100 V (Channel 3), 23 nC @ 20 V (Channel 2), 30.2 nC @ 20 V (Channel 1)
Maximum Operating Temperature: +175 °C
Minimum Operating Temperature: -55 °C
Automotive Standard: AEC-Q101