• Vishay - SQS484CENW-T1_GE3
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Vishay MOSFETs SQS484CENW-T1_GE3

Vishay MOSFETs SQS484CENW-T1_GE3

SKUSQS484CENW-T1_GE3BrandVishay
AED 3.46
AED 3.46
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Vishay, MOSFET, N channel, 0.011 , 0.0095 , 16 A, PowerPak 1212-8W

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  • Brand: Vishay
  • Channel Type: N
  • Maximum Continuous Drain Current: 16 A
  • Maximum Drain Source Voltage: 40 V
  • Series: AEC-Q101, Automotive, TrenchFET®
  • Package Type: PowerPAK 1212-8W
  • Pin Count: 8
  • Maximum Drain Source Resistance: 0.011 ?, 0.0095 ?
  • Channel Mode: Enhancement
  • Maximum Gate Threshold Voltage: 2.5V
  • Number of Elements per Chip: 1

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