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Vishay MOSFETs SI7456DDP-T1-GE3

Vishay MOSFETs SI7456DDP-T1-GE3

SKUSI7456DDP-T1-GE3BrandVishay
Regular price AED 7.05
Regular price Sale price AED 7.05
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Vishay, MOSFET, N-channel, 31 m , 28 A, PowerPAK SO-8, Surface Mounting

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  • Brand: Vishay
  • Channel Type: N
  • Maximum Continuous Drain Current: 28 A
  • Maximum Drain Source Voltage: 100 V
  • Package Type: PowerPAK SO-8
  • Mounting Type: Surface Mount
  • Pin Count: 8
  • Maximum Drain Source Resistance: 31 m?
  • Channel Mode: Enhancement
  • Minimum Gate Threshold Voltage: 1.5V
  • Maximum Power Dissipation: 35.7 W
  • Transistor Configuration: Single
  • Maximum Gate Source Voltage: -20 V, +20 V
  • Width: 5.26mm
  • Number of Elements per Chip: 1
  • Transistor Material: Si
  • Length: 6.25mm
  • Typical Gate Charge @ Vgs: 19.6 nC @ 10 V
  • Maximum Operating Temperature: +150 °C
  • Minimum Operating Temperature: -55 °C
  • Height: 1.12mm