• Infineon - IPB011N04LGATMA1
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Infineon MOSFETs IPB011N04LGATMA1

Infineon MOSFETs IPB011N04LGATMA1

SKUIPB011N04LGATMA1BrandInfineon
AED 37.50
AED 37.50
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Infineon, Dual N-Channel MOSFET Transistor Diode, 180 A, 40 V, 7-Pin D2PAK Infineon IPB011N04LGATMA1

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  • Brand: Infineon
  • Channel Type: N
  • Maximum Continuous Drain Current: 180 A
  • Maximum Drain Source Voltage: 40 V
  • Series: OptiMOS™ 5
  • Package Type: TO-263-7
  • Mounting Type: Surface Mount
  • Pin Count: 7
  • Maximum Drain Source Resistance: 0.0011 O
  • Channel Mode: Enhancement
  • Maximum Gate Threshold Voltage: 2V
  • Number of Elements per Chip: 2

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