• Infineon - BSB104N08NP3GXUSA1
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Infineon MOSFETs BSB104N08NP3GXUSA1

Infineon MOSFETs BSB104N08NP3GXUSA1

SKUBSB104N08NP3GXUSA1BrandInfineon
AED 5.11
AED 5.11
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Infineon, N-Channel MOSFET, 50 A, 80 V, 7-Pin MG-WDSON-2 Infineon BSB104N08NP3GXUSA1

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  • Brand: Infineon
  • Channel Type: N
  • Maximum Continuous Drain Current: 50 A
  • Maximum Drain Source Voltage: 80 V
  • Series: OptiMOS™
  • Package Type: MG-WDSON-2
  • Mounting Type: Surface Mount
  • Pin Count: 7
  • Maximum Drain Source Resistance: 0.0104 O
  • Channel Mode: Enhancement
  • Maximum Gate Threshold Voltage: 3.5V
  • Number of Elements per Chip: 1
  • Transistor Material: Si

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