• Infineon - BSB028N06NN3GXUMA1
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Infineon MOSFETs BSB028N06NN3GXUMA1

Infineon MOSFETs BSB028N06NN3GXUMA1

SKUBSB028N06NN3GXUMA1BrandInfineon
AED 4.12
AED 4.12
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Infineon, N-Channel MOSFET, 90 A, 60 V, 7-Pin MG-WDSON-2 Infineon BSB028N06NN3GXUMA1

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  • Brand: Infineon
  • Channel Type: N
  • Maximum Continuous Drain Current: 90 A
  • Maximum Drain Source Voltage: 60 V
  • Series: OptiMOS™ 3
  • Package Type: MG-WDSON-2
  • Mounting Type: Surface Mount
  • Pin Count: 7
  • Maximum Drain Source Resistance: 2.8 m?
  • Channel Mode: Enhancement
  • Maximum Power Dissipation: 78 W
  • Transistor Configuration: Single
  • Maximum Gate Source Voltage: -20 V, +20 V
  • Number of Elements per Chip: 1
  • Width: 5.05mm
  • Length: 6.35mm
  • Typical Gate Charge @ Vgs: 108 nC @ 10 V
  • Transistor Material: Si
  • Maximum Operating Temperature: +150 °C
  • Minimum Operating Temperature: -40 °C
  • Forward Diode Voltage: 1.2V
  • Height: 0.53mm

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