• Vishay - SISS73DN-T1-GE3
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Vishay MOSFETs SISS73DN-T1-GE3

Vishay MOSFETs SISS73DN-T1-GE3

SKUSISS73DN-T1-GE3BrandVishay
AED 4.49
AED 4.49
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Vishay, MOSFET, Single - P-Channel, 150V, 16.2A, PowerPAK 1212-8S

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  • Brand: Vishay
  • Channel Type: P
  • Maximum Continuous Drain Current: 16.2 A
  • Maximum Drain Source Voltage: 150 V
  • Package Type: PowerPAK 1212-8S
  • Mounting Type: Surface Mount
  • Pin Count: 8
  • Maximum Drain Source Resistance: 125 m?
  • Channel Mode: Enhancement
  • Maximum Gate Threshold Voltage: 4V
  • Minimum Gate Threshold Voltage: 2V
  • Maximum Power Dissipation: 65.8 W
  • Transistor Configuration: Single
  • Maximum Gate Source Voltage: ±20 V
  • Number of Elements per Chip: 1
  • Width: 3.3mm
  • Length: 3.3mm
  • Typical Gate Charge @ Vgs: 14.6 nC @ 10 V
  • Maximum Operating Temperature: +150 °C
  • Minimum Operating Temperature: -55 °C
  • Forward Diode Voltage: 1.2V
  • Height: 0.78mm

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