• Vishay - SISS27DN-T1-GE3
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Vishay MOSFETs SISS27DN-T1-GE3

Vishay MOSFETs SISS27DN-T1-GE3

SKUSISS27DN-T1-GE3BrandVishay
AED 1.65
AED 1.65
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Vishay, P-Channel MOSFET, 23 A, 30 V, 8-Pin PowerPAK 1212-8 Vishay SISS27DN-T1-GE3

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  • Brand: Vishay
  • Channel Type: P
  • Maximum Continuous Drain Current: 23 A
  • Maximum Drain Source Voltage: 30 V
  • Series: TrenchFET
  • Package Type: PowerPAK 1212-8
  • Mounting Type: Surface Mount
  • Pin Count: 8
  • Maximum Drain Source Resistance: 9 m?
  • Channel Mode: Enhancement
  • Minimum Gate Threshold Voltage: 1V
  • Maximum Power Dissipation: 57 W
  • Transistor Configuration: Single
  • Maximum Gate Source Voltage: -20 V, +20 V
  • Width: 3.3mm
  • Transistor Material: Si
  • Number of Elements per Chip: 1
  • Length: 3.3mm
  • Typical Gate Charge @ Vgs: 92 nC @ 10 V
  • Maximum Operating Temperature: +150 °C
  • Height: 0.78mm
  • Minimum Operating Temperature: -55 °C
  • Country of Origin: China

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