• Vishay - SISS23DN-T1-GE3
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Vishay MOSFETs SISS23DN-T1-GE3

Vishay MOSFETs SISS23DN-T1-GE3

SKUSISS23DN-T1-GE3BrandVishay
AED 2.64
AED 2.64
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Vishay, MOSFET, P channel, 11.5 m , 27 A, PowerPAK 1212-8, Surface mount

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  • Brand: Vishay
  • Channel Type: P
  • Maximum Continuous Drain Current: 27 A
  • Maximum Drain Source Voltage: 20 V
  • Package Type: PowerPAK 1212-8
  • Series: TrenchFET
  • Mounting Type: Surface Mount
  • Pin Count: 8
  • Maximum Drain Source Resistance: 11.5 m?
  • Channel Mode: Enhancement
  • Minimum Gate Threshold Voltage: 0.4V
  • Maximum Power Dissipation: 57 W
  • Transistor Configuration: Single
  • Maximum Gate Source Voltage: -8 V, +8 V
  • Transistor Material: Si
  • Maximum Operating Temperature: +150 °C
  • Number of Elements per Chip: 1
  • Width: 3.3mm
  • Length: 3.3mm
  • Typical Gate Charge @ Vgs: 195 nC @ 10 V
  • Minimum Operating Temperature: -55 °C
  • Height: 0.78mm
  • Country of Origin: China

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