• Vishay - SISS05DN-T1-GE3
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Vishay MOSFETs SISS05DN-T1-GE3

Vishay MOSFETs SISS05DN-T1-GE3

SKUSISS05DN-T1-GE3BrandVishay
AED 3.17
AED 3.17
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Vishay, MOSFET, Single - P-Channel, 30V, 108A, PowerPAK 1212-8S

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  • Brand: Vishay
  • Channel Type: P
  • Maximum Continuous Drain Current: 108 A
  • Maximum Drain Source Voltage: 30 V
  • Package Type: PowerPAK 1212-8S
  • Mounting Type: Surface Mount
  • Pin Count: 8
  • Maximum Drain Source Resistance: 5.8 m?
  • Channel Mode: Enhancement
  • Maximum Gate Threshold Voltage: 2.2V
  • Minimum Gate Threshold Voltage: 1V
  • Maximum Power Dissipation: 65.7 W
  • Transistor Configuration: Single
  • Maximum Gate Source Voltage: -20 V, +16 V
  • Number of Elements per Chip: 1
  • Width: 3.3mm
  • Length: 3.3mm
  • Typical Gate Charge @ Vgs: 76 nC @ 10 V
  • Maximum Operating Temperature: +150 °C
  • Minimum Operating Temperature: -55 °C
  • Forward Diode Voltage: 1.1V
  • Height: 0.78mm

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