• Vishay - SIS128LDN-T1-GE3
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Vishay MOSFETs SIS128LDN-T1-GE3

Vishay MOSFETs SIS128LDN-T1-GE3

SKUSIS128LDN-T1-GE3BrandVishay
AED 3,965.39
AED 3,965.39
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Vishay, MOSFET, Single - N-Channel, 80V, 33.7A, PowerPAK 1212-8

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  • Brand: Vishay
  • Channel Type: N
  • Maximum Continuous Drain Current: 33.7 A
  • Maximum Drain Source Voltage: 80 V
  • Package Type: PowerPAK 1212-8
  • Mounting Type: Surface Mount
  • Pin Count: 8
  • Maximum Drain Source Resistance: 20.3 m?
  • Channel Mode: Enhancement
  • Maximum Gate Threshold Voltage: 2.5V
  • Minimum Gate Threshold Voltage: 1V
  • Maximum Power Dissipation: 39 W
  • Transistor Configuration: Single
  • Maximum Gate Source Voltage: ±20 V
  • Number of Elements per Chip: 1
  • Width: 3.15mm
  • Length: 3.15mm
  • Typical Gate Charge @ Vgs: 20 nC @ 10 V
  • Maximum Operating Temperature: +150 °C
  • Minimum Operating Temperature: -55 °C
  • Forward Diode Voltage: 1.1V
  • Height: 1.07mm

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