• Vishay - SIRA14DP-T1-GE3
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Vishay MOSFETs SIRA14DP-T1-GE3

Vishay MOSFETs SIRA14DP-T1-GE3

SKUSIRA14DP-T1-GE3BrandVishay
AED 7.21
AED 7.21
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Vishay, N-Channel MOSFET, 58 A, 30 V, 8-Pin PowerPAK SO-8 Vishay SIRA14DP-T1-GE3

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  • Brand: Vishay
  • Channel Type: N
  • Maximum Continuous Drain Current: 58 A
  • Maximum Drain Source Voltage: 30 V
  • Series: TrenchFET
  • Package Type: PowerPAK SO-8
  • Mounting Type: Surface Mount
  • Pin Count: 8
  • Maximum Drain Source Resistance: 8.5 m?
  • Channel Mode: Enhancement
  • Minimum Gate Threshold Voltage: 1.1V
  • Maximum Power Dissipation: 31.2 W
  • Transistor Configuration: Single
  • Maximum Gate Source Voltage: -16 V, +20 V
  • Width: 5.26mm
  • Transistor Material: Si
  • Length: 6.25mm
  • Typical Gate Charge @ Vgs: 19.4 nC @ 10 V
  • Maximum Operating Temperature: +150 °C
  • Number of Elements per Chip: 1
  • Height: 1.12mm
  • Minimum Operating Temperature: -55 °C

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