• Vishay - SIJH800E-T1-GE3
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Vishay MOSFETs SIJH800E-T1-GE3

Vishay MOSFETs SIJH800E-T1-GE3

SKUSIJH800E-T1-GE3BrandVishay
AED 17.64
AED 17.64
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Vishay, N-Channel MOSFET, 299 A, 80 V, 4-Pin PowerPAK 8 x 8L Vishay SIJH800E-T1-GE3

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  • Brand: Vishay
  • Channel Type: N
  • Maximum Continuous Drain Current: 299 A
  • Maximum Drain Source Voltage: 80 V
  • Series: N-Channel 80-V
  • Package Type: PowerPAK 8 x 8L
  • Mounting Type: Surface Mount
  • Pin Count: 4
  • Maximum Drain Source Resistance: 0.0018 ?
  • Maximum Gate Threshold Voltage: 4V
  • Number of Elements per Chip: 1

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