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Vishay MOSFETs SIHB120N60E-T1-GE3

Vishay MOSFETs SIHB120N60E-T1-GE3

SKUSIHB120N60E-T1-GE3BrandVishay
Regular price AED 10.92
Regular price Sale price AED 10.92
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Vishay, SIHB120N60E-T1-GE3, Vishay

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  • Brand: Vishay
  • Channel Type: N
  • Maximum Continuous Drain Current: 25 A
  • Maximum Drain Source Voltage: 650 V
  • Series: E Series
  • Package Type: D2PAK (TO-263)
  • Mounting Type: Surface Mount
  • Pin Count: 3
  • Maximum Drain Source Resistance: 0.12 ?
  • Channel Mode: Enhancement
  • Maximum Gate Threshold Voltage: 5V
  • Number of Elements per Chip: 2
  • Transistor Material: Si