• Vishay - SI4909DY-T1-GE3
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Vishay MOSFETs SI4909DY-T1-GE3

Vishay MOSFETs SI4909DY-T1-GE3

SKUSI4909DY-T1-GE3BrandVishay
AED 3.26
AED 3.26
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Vishay, MOSFET, P channel, 34 m , 6.5 A, SOIC, Surface mount

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  • Brand: Vishay
  • Channel Type: P
  • Maximum Continuous Drain Current: 6.5 A
  • Maximum Drain Source Voltage: 40 V
  • Package Type: SOIC
  • Mounting Type: Surface Mount
  • Pin Count: 8
  • Maximum Drain Source Resistance: 34 m?
  • Channel Mode: Enhancement
  • Minimum Gate Threshold Voltage: 1.2V
  • Maximum Power Dissipation: 3.2 W
  • Transistor Configuration: Isolated
  • Maximum Gate Source Voltage: -20 V, +20 V
  • Width: 4mm
  • Number of Elements per Chip: 2
  • Length: 5mm
  • Transistor Material: Si
  • Typical Gate Charge @ Vgs: 41.5 nC @ 10 V
  • Maximum Operating Temperature: +150 °C
  • Height: 1.55mm
  • Minimum Operating Temperature: -55 °C
  • Country of Origin: China

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