• Vishay - SI3493DDV-T1-GE3
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Vishay MOSFETs SI3493DDV-T1-GE3

Vishay MOSFETs SI3493DDV-T1-GE3

SKUSI3493DDV-T1-GE3BrandVishay
AED 1.11
AED 1.11
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Vishay, P-Channel MOSFET, 8 A, 20 V, 6-Pin TSOP-6 Vishay SI3493DDV-T1-GE3

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  • Brand: Vishay
  • Channel Type: P
  • Maximum Continuous Drain Current: 8 A
  • Maximum Drain Source Voltage: 20 V
  • Series: TrenchFET
  • Package Type: TSOP-6
  • Mounting Type: Surface Mount
  • Pin Count: 6
  • Maximum Drain Source Resistance: 51 m?
  • Channel Mode: Enhancement
  • Maximum Gate Threshold Voltage: 1V
  • Minimum Gate Threshold Voltage: 0.4V
  • Maximum Power Dissipation: 3.6 W
  • Transistor Configuration: Single
  • Maximum Gate Source Voltage: -8 V, +8 V
  • Number of Elements per Chip: 1
  • Width: 1.7mm
  • Length: 3.1mm
  • Typical Gate Charge @ Vgs: 34.8 nC @ 8 V
  • Maximum Operating Temperature: +150 °C
  • Minimum Operating Temperature: -55 °C
  • Forward Diode Voltage: 1.2V
  • Height: 1mm

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