• Vishay - SI2337DS-T1-GE3
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Vishay MOSFETs SI2337DS-T1-GE3

Vishay MOSFETs SI2337DS-T1-GE3

SKUSI2337DS-T1-GE3BrandVishay
AED 1.57
AED 1.57
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Vishay, P-Channel MOSFET, 1.75 A, 80 V, 3-Pin SOT-23 Vishay SI2337DS-T1-GE3

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  • Brand: Vishay
  • Channel Type: P
  • Maximum Continuous Drain Current: 1.75 A
  • Maximum Drain Source Voltage: 80 V
  • Package Type: SOT-23
  • Mounting Type: Surface Mount
  • Pin Count: 3
  • Maximum Drain Source Resistance: 303 m?
  • Channel Mode: Enhancement
  • Minimum Gate Threshold Voltage: 2V
  • Maximum Power Dissipation: 2.5 W
  • Transistor Configuration: Single
  • Maximum Gate Source Voltage: -20 V, +20 V
  • Typical Gate Charge @ Vgs: 11 nC @ 10 V
  • Maximum Operating Temperature: +150 °C
  • Width: 1.4mm
  • Transistor Material: Si
  • Number of Elements per Chip: 1
  • Length: 3.04mm
  • Height: 1.02mm
  • Minimum Operating Temperature: -50 °C
  • Country of Origin: China

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