• Vishay - SI1922EDH-T1-GE3
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Vishay MOSFETs SI1922EDH-T1-GE3

Vishay MOSFETs SI1922EDH-T1-GE3

SKUSI1922EDH-T1-GE3BrandVishay
AED 0.78
AED 0.78
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Vishay, MOSFET, N channel, 263 m , 1.3 A, SOT-363, Surface mount

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  • Brand: Vishay
  • Channel Type: N
  • Maximum Continuous Drain Current: 1.3 A
  • Maximum Drain Source Voltage: 20 V
  • Package Type: SOT-363
  • Mounting Type: Surface Mount
  • Pin Count: 6
  • Maximum Drain Source Resistance: 263 m?
  • Channel Mode: Enhancement
  • Minimum Gate Threshold Voltage: 0.4V
  • Maximum Power Dissipation: 1.25 W
  • Transistor Configuration: Isolated
  • Maximum Gate Source Voltage: -8 V, +8 V
  • Number of Elements per Chip: 2
  • Width: 1.35mm
  • Length: 2.2mm
  • Typical Gate Charge @ Vgs: 1.6 nC @ 8 V
  • Transistor Material: Si
  • Maximum Operating Temperature: +150 °C
  • Minimum Operating Temperature: -55 °C
  • Height: 1mm
  • Country of Origin: Philippines

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