• Infineon - IRFB4227PBF
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Infineon MOSFETs IRFB4227PBF

Infineon MOSFETs IRFB4227PBF

SKUIRFB4227PBFBrandInfineon
AED 458.98
AED 458.98
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Infineon, N-Channel MOSFET, 65 A, 200 V, 3-Pin TO-220AB Infineon IRFB4227PBF

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  • Brand: Infineon
  • Channel Type: N
  • Maximum Continuous Drain Current: 65 A
  • Maximum Drain Source Voltage: 200 V
  • Series: HEXFET
  • Package Type: TO-220AB
  • Mounting Type: Through Hole
  • Pin Count: 3
  • Maximum Drain Source Resistance: 24 m?
  • Channel Mode: Enhancement
  • Maximum Gate Threshold Voltage: 5V
  • Minimum Gate Threshold Voltage: 3V
  • Maximum Power Dissipation: 330 W
  • Transistor Configuration: Single
  • Maximum Gate Source Voltage: -30 V, +30 V
  • Width: 4.82mm
  • Transistor Material: Si
  • Number of Elements per Chip: 1
  • Length: 10.66mm
  • Typical Gate Charge @ Vgs: 70 nC @ 10 V
  • Maximum Operating Temperature: +175 °C
  • Height: 9.02mm
  • Minimum Operating Temperature: -40 °C
  • Country of Origin: China

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