• Infineon - IRF5210LPBF
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Infineon MOSFETs IRF5210LPBF

Infineon MOSFETs IRF5210LPBF

SKUIRF5210LPBFBrandInfineon
AED 10.10
AED 10.10
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Infineon, P-Channel MOSFET, 38 A, 100 V, 3-Pin I2PAK Infineon IRF5210LPBF

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  • Brand: Infineon
  • Channel Type: P
  • Maximum Continuous Drain Current: 38 A
  • Maximum Drain Source Voltage: 100 V
  • Series: HEXFET
  • Package Type: I2PAK (TO-262)
  • Mounting Type: Through Hole
  • Pin Count: 3
  • Maximum Drain Source Resistance: 60 m?
  • Channel Mode: Enhancement
  • Maximum Gate Threshold Voltage: 4V
  • Minimum Gate Threshold Voltage: 2V
  • Maximum Power Dissipation: 3.1 W
  • Transistor Configuration: Single
  • Maximum Gate Source Voltage: -20 V, +20 V
  • Typical Gate Charge @ Vgs: 150 nC @ 10 V
  • Width: 4.69mm
  • Transistor Material: Si
  • Number of Elements per Chip: 1
  • Length: 10.54mm
  • Maximum Operating Temperature: +150 °C
  • Height: 10.54mm
  • Minimum Operating Temperature: -55 °C

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