• Infineon - IRF3315PBF
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Infineon MOSFETs IRF3315PBF

Infineon MOSFETs IRF3315PBF

SKUIRF3315PBFBrandInfineon
AED 2.18
AED 2.18
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Infineon, N-Channel MOSFET, 23 A, 150 V, 3-Pin TO-220AB Infineon IRF3315PBF

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  • Brand: Infineon
  • Channel Type: N
  • Maximum Continuous Drain Current: 23 A
  • Maximum Drain Source Voltage: 150 V
  • Series: HEXFET
  • Package Type: TO-220AB
  • Mounting Type: Through Hole
  • Pin Count: 3
  • Maximum Drain Source Resistance: 70 m?
  • Channel Mode: Enhancement
  • Maximum Gate Threshold Voltage: 4V
  • Minimum Gate Threshold Voltage: 2V
  • Maximum Power Dissipation: 94 W
  • Transistor Configuration: Single
  • Maximum Gate Source Voltage: -20 V, +20 V
  • Typical Gate Charge @ Vgs: 95 nC @ 10 V
  • Width: 4.69mm
  • Transistor Material: Si
  • Number of Elements per Chip: 1
  • Length: 10.54mm
  • Maximum Operating Temperature: +175 °C
  • Height: 8.77mm
  • Minimum Operating Temperature: -55 °C
  • Forward Diode Voltage: 1.3V

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