Skip to product information
1 of 1

Infineon MOSFETs IPAW60R180P7SXKSA1

Infineon MOSFETs IPAW60R180P7SXKSA1

SKUIPAW60R180P7SXKSA1BrandInfineon
Regular price AED 37.17
Regular price Sale price AED 37.17
Sale Sold out
Shipping calculated at checkout.

Infineon, This is N-Channel MOSFET 18 A 650 V 3-Pin TO-220 FullPAK Wide Creepage manufactured by Infineon. The manufacturer part number is IPAW60R180P7SXKSA1. It has a maximum of 650 v drain source voltage. The product is available in through hole configuration. The product carries enhancement channel mode. The product ipa60r, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 4.5v of maximum gate threshold voltage. It provides up to 180 mω maximum drain source resistance. The package is a sort of to-220 fp. It consists of 1 elements per chip. While 18 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It contains 3 pins.

View full details

Buying for a project?

Custom pricing on bulk orders & project quotes

Our specialists confirm compatibility, check stock across our brand network, and respond with a formal quote within one business day.

Talk to a Specialist
  • Brand: Infineon
  • Channel Type: N
  • Maximum Continuous Drain Current: 18 A
  • Maximum Drain Source Voltage: 650 V
  • Series: CoolMOS™ P7
  • Package Type: TO-220 FP
  • Mounting Type: Through Hole
  • Pin Count: 3
  • Maximum Drain Source Resistance: 180 m?
  • Channel Mode: Enhancement
  • Maximum Gate Threshold Voltage: 4.5V
  • Number of Elements per Chip: 1
  • Transistor Material: Si