• Infineon - IRLZ44NPBF
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Infineon MOSFETs IRLZ44NPBF

Infineon MOSFETs IRLZ44NPBF

SKUIRLZ44NPBFBrandInfineon
AED 4.37
AED 4.37
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Infineon, Technologies IRLZ44NPBF MOSFET 1 HEXFET 110 W TO-220

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  • Brand: Infineon
  • Channel Type: N
  • Maximum Continuous Drain Current: 47 A
  • Maximum Drain Source Voltage: 55 V
  • Series: HEXFET
  • Package Type: TO-220AB
  • Mounting Type: Through Hole
  • Pin Count: 3
  • Maximum Drain Source Resistance: 22 m?
  • Channel Mode: Enhancement
  • Maximum Gate Threshold Voltage: 2V
  • Minimum Gate Threshold Voltage: 1V
  • Maximum Power Dissipation: 110 W
  • Transistor Configuration: Single
  • Maximum Gate Source Voltage: -16 V, +16 V
  • Typical Gate Charge @ Vgs: 48 nC @ 5 V
  • Width: 4.69mm
  • Transistor Material: Si
  • Number of Elements per Chip: 1
  • Length: 10.54mm
  • Maximum Operating Temperature: +175 °C
  • Height: 8.77mm
  • Minimum Operating Temperature: -55 °C
  • Forward Diode Voltage: 1.3V

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