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Infineon MOSFETs IRFP064NPBF

Infineon MOSFETs IRFP064NPBF

SKUIRFP064NPBFBrandInfineon
Regular price AED 8.78
Regular price Sale price AED 8.78
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Infineon, This is manufactured by Infineon Technologies. The manufacturer part number is IRFP064NPBF. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 250 µa. The product has -55 °c ~ 175 °c (tj) operating temperature range. Moreover, the product comes in to-247-3. It has a maximum Rds On and voltage of 8mohm @ 59a, 10v. The maximum gate charge and given voltages include 170 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tube package . The product has a 55 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 200w (tc). The products input capacitance at maximum includes 4000 pf @ 25 v. It has a long 12 weeks standard lead time. The product is available in through hole configuration. The product hexfet, is a highly preferred choice for users. to-247ac is the supplier device package value. The continuous current drain at 25 °C is 110a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to irfp064, a base product number of the product. The product is designated with the ear99 code number.

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  • Brand: Infineon
  • Channel Type: N
  • Maximum Continuous Drain Current: 110 A
  • Maximum Drain Source Voltage: 55 V
  • Series: HEXFET
  • Package Type: TO-247AC
  • Mounting Type: Through Hole
  • Pin Count: 3
  • Maximum Drain Source Resistance: 8 m?
  • Channel Mode: Enhancement
  • Maximum Gate Threshold Voltage: 4V
  • Minimum Gate Threshold Voltage: 2V
  • Maximum Power Dissipation: 200 W
  • Transistor Configuration: Single
  • Maximum Gate Source Voltage: -20 V, +20 V
  • Number of Elements per Chip: 1
  • Length: 15.9mm
  • Typical Gate Charge @ Vgs: 170 nC @ 10 V
  • Maximum Operating Temperature: +175 °C
  • Width: 5.3mm
  • Transistor Material: Si
  • Height: 20.3mm
  • Minimum Operating Temperature: -55 °C
  • Country of Origin: Mexico