• Infineon - IRFB4332PBF
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Infineon MOSFETs IRFB4332PBF

Infineon MOSFETs IRFB4332PBF

SKUIRFB4332PBFBrandInfineon
AED 12.07
AED 12.07
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Infineon, N-Channel MOSFET, 60 A, 250 V, 3-Pin TO-220AB Infineon IRFB4332PBF

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  • Brand: Infineon
  • Channel Type: N
  • Maximum Continuous Drain Current: 60 A
  • Maximum Drain Source Voltage: 250 V
  • Package Type: TO-220AB
  • Series: HEXFET
  • Mounting Type: Through Hole
  • Pin Count: 3
  • Maximum Drain Source Resistance: 33 m?
  • Channel Mode: Enhancement
  • Maximum Gate Threshold Voltage: 5V
  • Minimum Gate Threshold Voltage: 3V
  • Maximum Power Dissipation: 390 W
  • Transistor Configuration: Single
  • Maximum Gate Source Voltage: -30 V, +30 V
  • Typical Gate Charge @ Vgs: 99 nC @ 10 V
  • Maximum Operating Temperature: +175 °C
  • Width: 4.82mm
  • Transistor Material: Si
  • Number of Elements per Chip: 1
  • Length: 10.66mm
  • Height: 9.02mm
  • Minimum Operating Temperature: -40 °C
  • Country of Origin: Mexico

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