• Vishay - SUD50P04-08-GE3
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Vishay MOSFETs SUD50P04-08-GE3

Vishay MOSFETs SUD50P04-08-GE3

SKUSUD50P04-08-GE3BrandVishay
AED 2.18
AED 2.18
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Vishay, MOSFET, P channel, 10 m , 50 A, DPAK (TO-252), Surface Mounting

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  • Brand: Vishay
  • Channel Type: P
  • Maximum Continuous Drain Current: 50 A
  • Maximum Drain Source Voltage: 40 V
  • Package Type: DPAK (TO-252)
  • Mounting Type: Surface Mount
  • Pin Count: 3
  • Maximum Drain Source Resistance: 10 m?
  • Channel Mode: Enhancement
  • Maximum Gate Threshold Voltage: 2.5V
  • Minimum Gate Threshold Voltage: 1V
  • Maximum Power Dissipation: 73.5 W
  • Transistor Configuration: Single
  • Maximum Gate Source Voltage: -20 V, +20 V
  • Width: 6.22mm
  • Transistor Material: Si
  • Number of Elements per Chip: 1
  • Length: 6.73mm
  • Typical Gate Charge @ Vgs: 106 nC @ 10 V
  • Maximum Operating Temperature: +150 °C
  • Height: 2.38mm
  • Minimum Operating Temperature: -55 °C
  • Forward Diode Voltage: 1.5V

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