• Vishay - SQ2361ES-T1_GE3
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Vishay MOSFETs SQ2361ES-T1_GE3

Vishay MOSFETs SQ2361ES-T1_GE3

SKUSQ2361ES-T1_GE3BrandVishay
AED 1.98
AED 1.98
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Vishay, Siliconix, SQ2361ES-T1_GE3

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  • Brand: Vishay
  • Channel Type: P
  • Maximum Continuous Drain Current: 2.8 A
  • Maximum Drain Source Voltage: 60 V
  • Package Type: SOT-23
  • Mounting Type: Surface Mount
  • Pin Count: 3
  • Maximum Drain Source Resistance: 320 m?
  • Channel Mode: Enhancement
  • Maximum Gate Threshold Voltage: -2.5V
  • Minimum Gate Threshold Voltage: -1.5V
  • Maximum Power Dissipation: 2 W
  • Transistor Configuration: Single
  • Maximum Gate Source Voltage: 20 V
  • Number of Elements per Chip: 1
  • Width: 1.4mm
  • Length: 3.04mm
  • Typical Gate Charge @ Vgs: 9 nC @ 10 V
  • Maximum Operating Temperature: +175 °C
  • Minimum Operating Temperature: -55 °C
  • Forward Diode Voltage: -1.2V
  • Height: 1.02mm
  • Automotive Standard: AEC-Q101

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