• Vishay - SiSHA14DN-T1-GE3
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Vishay MOSFETs SiSHA14DN-T1-GE3

Vishay MOSFETs SiSHA14DN-T1-GE3

SKUSiSHA14DN-T1-GE3BrandVishay
AED 1.94
AED 1.94
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Vishay, MOSFET, N-Channel, 8m, 20A, PowerPAK 1212-8SH, Surface Mount

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  • Brand: Vishay
  • Channel Type: N
  • Maximum Continuous Drain Current: 20 A
  • Maximum Drain Source Voltage: 30 V
  • Package Type: PowerPAK 1212-8SH
  • Mounting Type: Surface Mount
  • Pin Count: 8
  • Maximum Drain Source Resistance: 8 m?
  • Channel Mode: Enhancement
  • Maximum Gate Threshold Voltage: 2.2V
  • Minimum Gate Threshold Voltage: 1.1V
  • Maximum Power Dissipation: 26.5 W
  • Transistor Configuration: Single
  • Maximum Gate Source Voltage: -16 V, +20 V
  • Number of Elements per Chip: 1
  • Width: 3.3mm
  • Length: 3.3mm
  • Typical Gate Charge @ Vgs: 19.4 nC @ 10 V
  • Maximum Operating Temperature: +150 °C
  • Minimum Operating Temperature: -55 °C
  • Forward Diode Voltage: 1.1V
  • Height: 0.93mm

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