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Vishay MOSFETs SiSH892BDN-T1-GE3

Vishay MOSFETs SiSH892BDN-T1-GE3

SKUSiSH892BDN-T1-GE3BrandVishay
Regular price AED 1.61
Regular price Sale price AED 1.61
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Vishay, SiSH892BDN-T1-GE3, Vishay

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  • Brand: Vishay
  • Channel Type: N
  • Maximum Continuous Drain Current: 20 A
  • Maximum Drain Source Voltage: 100 V
  • Series: TrenchFET
  • Package Type: PowerPAK 1212-8SH
  • Mounting Type: Surface Mount
  • Pin Count: 8
  • Maximum Drain Source Resistance: 0.0304 ?
  • Channel Mode: Enhancement
  • Maximum Gate Threshold Voltage: 2.4V
  • Number of Elements per Chip: 1
  • Transistor Material: Si