• Vishay - SISF02DN-T1-GE3
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Vishay MOSFETs SISF02DN-T1-GE3

Vishay MOSFETs SISF02DN-T1-GE3

SKUSISF02DN-T1-GE3BrandVishay
AED 6.26
AED 6.26
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Vishay, MOSFET, Dual Common Drain - N-Channel, 25V, 60A, PowerPAK 1212-8SCD

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  • Brand: Vishay
  • Channel Type: N
  • Maximum Continuous Drain Current: 60 A
  • Maximum Drain Source Voltage: 25 V
  • Package Type: PowerPAK 1212-8SCD
  • Mounting Type: Surface Mount
  • Pin Count: 8
  • Maximum Drain Source Resistance: 5 m?
  • Channel Mode: Enhancement
  • Maximum Gate Threshold Voltage: 2.3V
  • Minimum Gate Threshold Voltage: 1V
  • Maximum Power Dissipation: 69.4 W
  • Transistor Configuration: Common Drain
  • Maximum Gate Source Voltage: -12 V, +16 V
  • Number of Elements per Chip: 2
  • Width: 3.4mm
  • Length: 3.4mm
  • Typical Gate Charge @ Vgs: 37 nC @ 10 V
  • Maximum Operating Temperature: +150 °C
  • Minimum Operating Temperature: -55 °C
  • Height: 0.75mm

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