• Vishay - SIRA99DP-T1-GE3
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Vishay MOSFETs SIRA99DP-T1-GE3

Vishay MOSFETs SIRA99DP-T1-GE3

SKUSIRA99DP-T1-GE3BrandVishay
AED 10.05
AED 10.05
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Vishay, MOSFET, P channel, 2.6 m , 195 A, PowerPAK SO-8, Surface mount

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  • Brand: Vishay
  • Channel Type: P
  • Maximum Continuous Drain Current: 195 A
  • Maximum Drain Source Voltage: 30 V
  • Package Type: PowerPAK SO-8
  • Mounting Type: Surface Mount
  • Pin Count: 8
  • Maximum Drain Source Resistance: 2.6 m?
  • Channel Mode: Enhancement
  • Maximum Gate Threshold Voltage: 2.5V
  • Minimum Gate Threshold Voltage: 1V
  • Maximum Power Dissipation: 104 W
  • Transistor Configuration: Single
  • Maximum Gate Source Voltage: -20 V, +16 V
  • Number of Elements per Chip: 1
  • Width: 5mm
  • Length: 5.99mm
  • Typical Gate Charge @ Vgs: 172.5 nC @ 10 V
  • Maximum Operating Temperature: +150 °C
  • Minimum Operating Temperature: -55 °C
  • Forward Diode Voltage: 1.1V
  • Height: 1.07mm
  • Country of Origin: China

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