• Vishay - SIHU4N80AE-GE3
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Vishay MOSFETs SIHU4N80AE-GE3

Vishay MOSFETs SIHU4N80AE-GE3

SKUSIHU4N80AE-GE3BrandVishay
AED 4.45
AED 4.45
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Vishay, E-Series Power Mosfet, Single - N-Channel, 800V, 4.1A, TO-251

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  • Brand: Vishay
  • Channel Type: N
  • Maximum Continuous Drain Current: 4.1 A
  • Maximum Drain Source Voltage: 800 V
  • Package Type: IPAK (TO-251)
  • Mounting Type: Through Hole
  • Pin Count: 3
  • Maximum Drain Source Resistance: 1.44 ?
  • Channel Mode: Enhancement
  • Maximum Gate Threshold Voltage: 4V
  • Minimum Gate Threshold Voltage: 2V
  • Maximum Power Dissipation: 62.5 W
  • Transistor Configuration: Single
  • Maximum Gate Source Voltage: ±30 V
  • Length: 6.73mm
  • Typical Gate Charge @ Vgs: 11 nC @ 10 V
  • Number of Elements per Chip: 1
  • Width: 2.38mm
  • Maximum Operating Temperature: +150 °C
  • Height: 6.22mm
  • Minimum Operating Temperature: -55 °C
  • Forward Diode Voltage: 1.2V

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