• Vishay - SIHP22N60EF-GE3
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Vishay MOSFETs SIHP22N60EF-GE3

Vishay MOSFETs SIHP22N60EF-GE3

SKUSIHP22N60EF-GE3BrandVishay
AED 12.69
AED 12.69
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Vishay, EF Series MOSFET, Single - N-Channel, 600V, 19A, TO-220AB

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  • Brand: Vishay
  • Channel Type: N
  • Maximum Continuous Drain Current: 19 A
  • Maximum Drain Source Voltage: 600 V
  • Package Type: TO-220AB
  • Mounting Type: Through Hole
  • Pin Count: 3
  • Maximum Drain Source Resistance: 182 m?
  • Channel Mode: Enhancement
  • Maximum Gate Threshold Voltage: 4V
  • Minimum Gate Threshold Voltage: 2V
  • Maximum Power Dissipation: 179 W
  • Transistor Configuration: Single
  • Maximum Gate Source Voltage: ±30 V
  • Number of Elements per Chip: 1
  • Width: 4.65mm
  • Length: 10.51mm
  • Typical Gate Charge @ Vgs: 48 nC @ 10 V
  • Maximum Operating Temperature: +150 °C
  • Minimum Operating Temperature: -55 °C
  • Forward Diode Voltage: 1.2V
  • Height: 9.01mm
  • Country of Origin: China

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