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Vishay MOSFETs SIHD3N50D-GE3

Vishay MOSFETs SIHD3N50D-GE3

SKUSIHD3N50D-GE3BrandVishay
Regular price AED 2.88
Regular price Sale price AED 2.88
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Vishay, SIHD3N50D-GE3, Vishay

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  • Brand: Vishay
  • Channel Type: N
  • Maximum Continuous Drain Current: 3 A
  • Maximum Drain Source Voltage: 500 V
  • Series: D Series
  • Package Type: DPAK (TO-252)
  • Mounting Type: Surface Mount
  • Pin Count: 3
  • Maximum Drain Source Resistance: 3.2 ?
  • Channel Mode: Enhancement
  • Minimum Gate Threshold Voltage: 3V
  • Maximum Power Dissipation: 104 W
  • Transistor Configuration: Single
  • Maximum Gate Source Voltage: -30 V, +30 V
  • Number of Elements per Chip: 1
  • Width: 6.22mm
  • Length: 6.73mm
  • Typical Gate Charge @ Vgs: 6 nC @ 10 V
  • Transistor Material: Si
  • Maximum Operating Temperature: +150 °C
  • Minimum Operating Temperature: -55 °C
  • Height: 2.38mm