• Vishay - SIHD186N60EF-GE3
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Vishay MOSFETs SIHD186N60EF-GE3

Vishay MOSFETs SIHD186N60EF-GE3

SKUSIHD186N60EF-GE3BrandVishay
AED 11.21
AED 11.21
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Vishay, N-Channel MOSFET, 19 A, 600 V, 3-Pin DPAK Vishay SIHD186N60EF-GE3

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  • Brand: Vishay
  • Channel Type: N
  • Maximum Continuous Drain Current: 19 A
  • Maximum Drain Source Voltage: 600 V
  • Package Type: DPAK (TO-252)
  • Mounting Type: Surface Mount
  • Pin Count: 3
  • Maximum Drain Source Resistance: 201 m?
  • Channel Mode: Enhancement
  • Maximum Gate Threshold Voltage: 5V
  • Minimum Gate Threshold Voltage: 3V
  • Maximum Power Dissipation: 156 W
  • Transistor Configuration: Single
  • Maximum Gate Source Voltage: ±30 V
  • Number of Elements per Chip: 1
  • Width: 6.22mm
  • Length: 6.73mm
  • Typical Gate Charge @ Vgs: 21 nC @ 10 V
  • Maximum Operating Temperature: +150 °C
  • Minimum Operating Temperature: -55 °C
  • Forward Diode Voltage: 1.2V
  • Height: 2.25mm

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