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Vishay MOSFETs SIHB30N60E-GE3

Vishay MOSFETs SIHB30N60E-GE3

SKUSIHB30N60E-GE3BrandVishay
Regular price AED 20.07
Regular price Sale price AED 20.07
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Vishay, SIHB30N60E-GE3, Vishay Siliconix

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  • Brand: Vishay
  • Channel Type: N
  • Maximum Continuous Drain Current: 29 A
  • Maximum Drain Source Voltage: 600 V
  • Series: E Series
  • Package Type: D2PAK (TO-263)
  • Mounting Type: Surface Mount
  • Pin Count: 3
  • Maximum Drain Source Resistance: 125 m?
  • Channel Mode: Enhancement
  • Minimum Gate Threshold Voltage: 2V
  • Maximum Power Dissipation: 250 W
  • Transistor Configuration: Single
  • Maximum Gate Source Voltage: -20 V, +20 V
  • Number of Elements per Chip: 1
  • Length: 10.67mm
  • Typical Gate Charge @ Vgs: 85 nC @ 10 V
  • Maximum Operating Temperature: +150 °C
  • Transistor Material: Si
  • Width: 9.65mm
  • Minimum Operating Temperature: -55 °C
  • Height: 4.83mm