• Vishay - SIHA100N60E-GE3
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Vishay MOSFETs SIHA100N60E-GE3

Vishay MOSFETs SIHA100N60E-GE3

SKUSIHA100N60E-GE3BrandVishay
AED 18.34
AED 18.34
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Vishay, MOSFET, N-channel, 100 m , 30 A, TO-220, On Hole

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  • Brand: Vishay
  • Channel Type: N
  • Maximum Continuous Drain Current: 30 A
  • Maximum Drain Source Voltage: 600 V
  • Package Type: TO-220
  • Mounting Type: Through Hole
  • Pin Count: 3
  • Maximum Drain Source Resistance: 100 m?
  • Channel Mode: Enhancement
  • Maximum Gate Threshold Voltage: 5V
  • Minimum Gate Threshold Voltage: 3V
  • Maximum Power Dissipation: 35 W
  • Transistor Configuration: Single
  • Maximum Gate Source Voltage: ±30 V
  • Number of Elements per Chip: 1
  • Width: 4.7mm
  • Length: 10.3mm
  • Typical Gate Charge @ Vgs: 33 nC @ 10 V
  • Maximum Operating Temperature: +150 °C
  • Minimum Operating Temperature: -55 °C
  • Forward Diode Voltage: 1.2V
  • Height: 15.3mm

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