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Vishay MOSFETs SI7129DN-T1-GE3

Vishay MOSFETs SI7129DN-T1-GE3

SKUSI7129DN-T1-GE3BrandVishay
Regular price AED 4.00
Regular price Sale price AED 4.00
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Vishay, SI7129DN-T1-GE3, Vishay Siliconix

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  • Brand: Vishay
  • Channel Type: P
  • Maximum Continuous Drain Current: 11.5 A
  • Maximum Drain Source Voltage: 30 V
  • Package Type: PowerPAK 1212-8
  • Mounting Type: Surface Mount
  • Pin Count: 8
  • Maximum Drain Source Resistance: 20 m?
  • Channel Mode: Enhancement
  • Minimum Gate Threshold Voltage: 1.5V
  • Maximum Power Dissipation: 52.1 W
  • Transistor Configuration: Single
  • Maximum Gate Source Voltage: -20 V, +20 V
  • Width: 3.15mm
  • Transistor Material: Si
  • Number of Elements per Chip: 1
  • Length: 3.15mm
  • Typical Gate Charge @ Vgs: 47.5 nC @ 10 V
  • Maximum Operating Temperature: +150 °C
  • Height: 1.07mm
  • Minimum Operating Temperature: -50 °C
  • Country of Origin: China