• Vishay - SI5935CDC-T1-GE3
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Vishay MOSFETs SI5935CDC-T1-GE3

Vishay MOSFETs SI5935CDC-T1-GE3

SKUSI5935CDC-T1-GE3BrandVishay
AED 1.98
AED 1.98
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Vishay, MOSFET, P channel, 156 m , 3.8 A, 1206 ChipFET, Surface Mounting

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  • Brand: Vishay
  • Channel Type: P
  • Maximum Continuous Drain Current: 3.8 A
  • Maximum Drain Source Voltage: 20 V
  • Package Type: 1206 ChipFET
  • Mounting Type: Surface Mount
  • Pin Count: 8
  • Maximum Drain Source Resistance: 156 m?
  • Channel Mode: Enhancement
  • Minimum Gate Threshold Voltage: 0.4V
  • Maximum Power Dissipation: 3.1 W
  • Transistor Configuration: Isolated
  • Maximum Gate Source Voltage: -8 V, +8 V
  • Width: 1.7mm
  • Transistor Material: Si
  • Number of Elements per Chip: 2
  • Length: 3.1mm
  • Typical Gate Charge @ Vgs: 7 nC @ 5 V
  • Maximum Operating Temperature: +150 °C
  • Height: 1.1mm
  • Minimum Operating Temperature: -55 °C
  • Country of Origin: China

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