• Vishay - SI2377EDS-T1-GE3
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Vishay MOSFETs SI2377EDS-T1-GE3

Vishay MOSFETs SI2377EDS-T1-GE3

SKUSI2377EDS-T1-GE3BrandVishay
AED 0.49
AED 0.49
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Vishay, MOSFET, P channel, 165 m , 3.5 A, SOT-23, Surface mount

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  • Brand: Vishay
  • Channel Type: P
  • Maximum Continuous Drain Current: 3.5 A
  • Maximum Drain Source Voltage: 20 V
  • Package Type: SOT-23
  • Mounting Type: Surface Mount
  • Pin Count: 3
  • Maximum Drain Source Resistance: 165 m?
  • Channel Mode: Enhancement
  • Minimum Gate Threshold Voltage: 0.4V
  • Maximum Power Dissipation: 1.8 W
  • Transistor Configuration: Single
  • Maximum Gate Source Voltage: -8 V, +8 V
  • Number of Elements per Chip: 1
  • Width: 1.4mm
  • Length: 3.04mm
  • Typical Gate Charge @ Vgs: 14 nC @ 8 V
  • Transistor Material: Si
  • Maximum Operating Temperature: +150 °C
  • Minimum Operating Temperature: -55 °C
  • Height: 1.02mm
  • Country of Origin: China

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