• Infineon - IRLD024PBF
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Infineon MOSFETs IRLD024PBF

Infineon MOSFETs IRLD024PBF

SKUIRLD024PBFBrandInfineon
AED 7.66
AED 7.66
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Infineon, Technologies IRLD024PBF MOSFET 1 Canale N 1.3 W HEXDIP

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  • Brand: Vishay
  • Channel Type: N
  • Maximum Continuous Drain Current: 2.5 A
  • Maximum Drain Source Voltage: 60 V
  • Package Type: HVMDIP
  • Mounting Type: Through Hole
  • Pin Count: 4
  • Maximum Drain Source Resistance: 100 m?
  • Channel Mode: Enhancement
  • Minimum Gate Threshold Voltage: 1V
  • Maximum Power Dissipation: 1.3 W
  • Transistor Configuration: Single
  • Maximum Gate Source Voltage: -10 V, +10 V
  • Typical Gate Charge @ Vgs: 18 nC @ 5 V
  • Width: 6.29mm
  • Transistor Material: Si
  • Number of Elements per Chip: 1
  • Length: 5mm
  • Maximum Operating Temperature: +175 °C
  • Minimum Operating Temperature: -55 °C
  • Height: 3.37mm

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