• Infineon - IRFB4610PBF
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Infineon MOSFETs IRFB4610PBF

Infineon MOSFETs IRFB4610PBF

SKUIRFB4610PBFBrandInfineon
AED 7.66
AED 7.66
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Infineon, Technologies IRFB4610PBF MOSFET 1 Canale N 190 W TO-220AB

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  • Brand: Infineon
  • Channel Type: N
  • Maximum Continuous Drain Current: 73 A
  • Maximum Drain Source Voltage: 100 V
  • Package Type: TO-220AB
  • Series: HEXFET
  • Mounting Type: Through Hole
  • Pin Count: 3
  • Maximum Drain Source Resistance: 14 m?
  • Channel Mode: Enhancement
  • Maximum Gate Threshold Voltage: 4V
  • Minimum Gate Threshold Voltage: 2V
  • Maximum Power Dissipation: 190 W
  • Transistor Configuration: Single
  • Maximum Gate Source Voltage: -20 V, +20 V
  • Length: 10.54mm
  • Maximum Operating Temperature: +175 °C
  • Typical Gate Charge @ Vgs: 90 nC @ 10 V
  • Width: 4.69mm
  • Transistor Material: Si
  • Number of Elements per Chip: 1
  • Height: 8.77mm
  • Minimum Operating Temperature: -55 °C

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