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Infineon MOSFETs BSP149

Infineon MOSFETs BSP149

SKUBSP149BrandInfineon
AED 2.84
AED 2.84
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Infineon, Technologies BSP149 MOSFET 1 Canale N 1.8 W TO-261-4

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  • Brand: Infineon
  • Channel Type: N
  • Maximum Continuous Drain Current: 660 mA
  • Maximum Drain Source Voltage: 200 V
  • Series: SIPMOS®
  • Package Type: SOT-223
  • Mounting Type: Surface Mount
  • Pin Count: 3
  • Maximum Drain Source Resistance: 1.8 ?
  • Channel Mode: Depletion
  • Maximum Gate Threshold Voltage: 1V
  • Minimum Gate Threshold Voltage: 2.1V
  • Maximum Power Dissipation: 1.8 W
  • Transistor Configuration: Single
  • Maximum Gate Source Voltage: -20 V, +20 V
  • Typical Gate Charge @ Vgs: 11 nC @ 5 V
  • Width: 3.5mm
  • Transistor Material: Si
  • Number of Elements per Chip: 1
  • Length: 6.5mm
  • Maximum Operating Temperature: +150 °C
  • Minimum Operating Temperature: -55 °C
  • Forward Diode Voltage: 1.2V
  • Height: 1.6mm
  • Automotive Standard: AEC-Q101

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