• Infineon - IRLB4030PBF
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Infineon MOSFETs IRLB4030PBF

Infineon MOSFETs IRLB4030PBF

SKUIRLB4030PBFBrandInfineon
AED 12.16
AED 12.16
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Infineon, N-Channel MOSFET, 180 A, 100 V, 3-Pin TO-220AB Infineon IRLB4030PBF

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  • Brand: Infineon
  • Channel Type: N
  • Maximum Continuous Drain Current: 180 A
  • Maximum Drain Source Voltage: 100 V
  • Series: HEXFET
  • Package Type: TO-220AB
  • Mounting Type: Through Hole
  • Pin Count: 3
  • Maximum Drain Source Resistance: 4 m?
  • Channel Mode: Enhancement
  • Maximum Gate Threshold Voltage: 2.5V
  • Minimum Gate Threshold Voltage: 1V
  • Maximum Power Dissipation: 370 W
  • Transistor Configuration: Single
  • Maximum Gate Source Voltage: -16 V, +16 V
  • Transistor Material: Si
  • Number of Elements per Chip: 1
  • Length: 10.67mm
  • Typical Gate Charge @ Vgs: 87 nC @ 4.5 V
  • Maximum Operating Temperature: +175 °C
  • Width: 4.83mm
  • Minimum Operating Temperature: -55 °C
  • Height: 9.02mm
  • Country of Origin: Mexico

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